PH760DBR
Photodigm PH760DBR 760 nm DBR laser
This monolithic laser diode incorporates a distributed Bragg reflector (DBR) for stable frequency performance over its life time. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high reliability. The 760 nm DBR Laser Diode is designed specifically for O2 detection.
- DBR Single-Frequency Laser Chip
- AlGaAs QW Active Layer
- Facets passivated to withstand high power without catastrophic optical damage (COD)
- Epi designed for high reliability
- Wavelength tunable across several lines of the O2 spectrum around 760 nm
- Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
Available packages : chip-on-submount, C-mount, TO-8
Main specifications
| MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|
| Center Wavelength | 768 | 770 | 772 | nm |
| Output power @ 150 mA | 20 /40 / 80 | mW | ||
| Spectral linewidth @ 150 mA | 0.7 | 1 | MHz | |
| SMSR | - 30 | dB | ||
| Beam divergence (free space package) | 6 x 26 | 8 x 30 | ° | |
| Fiber pigtail (with butterfly package) | PM |
Applications
Related Product
Documentation
+ 33-(0)685 -220-115 / info@morephotonics.com
