PH767DBR
Photodigm PH767DBR 767 nm DBR laser
This monolithic laser diode incorporates a distributed Bragg reflector (DBR) for stable frequency performance over its life time. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high reliability. The 767 nm DBR Laser Diode is designed specifically for K D2 line spectroscopy.
- DBR Single-Frequency Laser Chip
- AlGaAs QW Active Layer
- Facets passivated to withstand high power without catastrophic optical damage (COD)
- Epi designed for high reliability
- Wavelength tunable across the K D2 line 767 nm
- Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
Available packages : chip-on-submount, C-mount, TO-8, butterfly
Main specifications
| MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|
| Center Wavelength | 765 | 767 | 769 | nm |
| Output power @ 150 mA | 20 /40 / 80 | mW | ||
| Spectral linewidth @ 150 mA | 0.7 | 1 | MHz | |
| SMSR | - 30 | dB | ||
| Beam divergence (free space package) | 6 x 26 | 8 x 30 | ° | |
| Fiber pigtail (with butterfly package) | PM |
Applications
Related Product
Documentation
+ 33-(0)685 -220-115 / info@morephotonics.com
