PH785DBR
Photodigm PH785DBR 785 nm DBR laser
This monolithic laser diode incorporates a distributed Bragg reflector (DBR) for stable frequency performance over its life time. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high reliability. Applications for the 785 nm DBR Laser Diode include Raman spectroscopy and optical storage.
- DBR Single-Frequency Laser Chip
- AlGaAs QW Active Layer
- Facets passivated to withstand high power without catastrophic optical damage (COD)
- Epi designed for high reliability
- Wavelength tunable across 2 nm
- Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
Available packages : chip-on-submount, C-mount, TO-8, butterfly
Main specifications
| MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|
| Center Wavelength | 783 | 785 | 787 | nm |
| Output power @ 150 mA | 40 / 80 / 120 / 180 | mW | ||
| Spectral linewidth @ 150 mA | 3 | 10 | MHz | |
| SMSR | - 30 | dB | ||
| Beam divergence (free space package) | 6 x 32 | 8 x 34 | ° | |
| Fiber pigtail (with butterfly package) | PM |
Applications
Related Product
Documentation
+ 33-(0)685 -220-115 / info@morephotonics.com
