PH808DBR

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Photodigm PH808DBR 808 nm DBR laser

This monolithic laser diode incorporates a distributed Bragg reflector (DBR) for stable frequency performance over its life time. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high reliability. Applications for the 808 nm DBR Laser Diode include medical diagnostics, solid state laser pumping, and metrology.

DBR Single-Frequency Laser Chip
AlGaAs QW Active Layer
Facets passivated to withstand high power without catastrophic optical damage (COD)
Epi designed for high reliability
Wavelength tunable across 2 nm
Pulsed operation for spectral stability at short pulse lengths
High power for CW applications
High Slope Efficiency

Available packages : chip-on-submount, C-mount, TO-8, butterfly

Main specifications

	MIN	TYP	MAX	UNIT
Center Wavelength	806	808	810	nm
Output power @ 150 mA	40 / 80 / 120			mW
Spectral linewidth @ 150 mA		0.7	1	MHz
SMSR	- 30			dB
Beam divergence (free space package)		6 x 26	8 x 28	°
Fiber pigtail (with butterfly package)		PM