PH852DBR
Photodigm PH852DBR 852 nm DBR laser
This monolithic laser diode incorporates a distributed Bragg reflector (DBR) for stable frequency performance over its life time. It provides a diffraction limited, single lateral and longitudinal mode beam. Facets are passivated for high reliability. Applications for the 852 nm DBR Laser Diode include atomic spectroscopy for cesium based applications and fiber optics telecommunications.
- DBR Single-Frequency Laser Chip
- AlGaAs QW Active Layer
- Facets passivated to withstand high power without catastrophic optical damage (COD)
- Epi designed for high reliability
- Wavelength tunable across 2 nm around the Cs line
- Pulsed operation for spectral stability at short pulse lengths
- High power for CW applications
- High Slope Efficiency
Available packages : chip-on-submount, C-mount, TO-8, butterfly
Main specifications
| MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|
| Center Wavelength | 850 | 852 | 854 | nm |
| Output power @ 150 mA | from 40 to 280 | mW | ||
| Spectral linewidth @ 150 mA | 0.5 | 1 | MHz | |
| SMSR | - 30 | dB | ||
| Beam divergence (free space package) | 6 x 32 | 8 x 34 | ° | |
| Fiber pigtail (with butterfly package) | PM |
Applications
Related Product
Documentation
+ 33-(0)685 -220-115 / info@morephotonics.com
